Ascatron provides next generation Silicon Carbide (SiC) power semiconductors radically reducing losses in power converters.
The high voltage power devices are based on Ascatron proprietary 3DSiC® material technology with buried doping structures to reduce the surface electric field. This gives very robust devices with lower losses and reliable operation at full power.
Target applications are high voltage power electronics used in industry, automotive and renewable energy. Ascatron is a Sweden based scale-up company with background in producing advanced SiC epitaxy material for global customers since 2011.